Electron tunneling in Si‐SiO2‐Al structures: A comparison between 〈100〉 oriented and 〈111〉 oriented Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92569
Reference4 articles.
1. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
2. Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon
3. Differential studies of dual‐dielectric charge‐storage cells
4. Fowler‐Nordheim electron tunneling in thin Si‐SiO2‐Al structures
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1. Tunneling through ultrathin SiO2 gate oxides from microscopic models;Journal of Applied Physics;2001-01
2. Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides;Superlattices and Microstructures;2000-05
3. A Simple Model of the Chemical Nature of Bonds at the Si—SiO2 Interface and its Influence on the Electronic Properties of MOS Devices;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
4. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures;Solid-State Electronics;1995-08
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