Hafnium-Based Ferroelectric Memory Device With Integrated Selective Function Using Crested Band Structure-Reference-Cited by-同舟云学术

Hafnium-Based Ferroelectric Memory Device With Integrated Selective Function Using Crested Band Structure

Published:2023-10 Issue:10 Volume:70 Page:5113-5118
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Jiajie¹,Wang Tianyu¹^ORCID,Xu Kangli¹^ORCID,Liu Yongkai¹,Meng Jialin¹^ORCID,Li Zhenhai¹,Liu Pei¹^ORCID,Zhu Hao¹^ORCID,Sun Qingqing¹^ORCID,Zhang David Wei¹,Chen Lin¹^ORCID

Affiliation:

1. School of Microelectronics, Fudan University, Shanghai, China

Funder

National Key Research and Development Program of China

NSFC

Science and Technology Commission of Shanghai Municipality

Shanghai Sailing Program

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10236982.pdf?arnumber=10236982

Reference32 articles.

1. Ferroelectric tunnel junctions for information storage and processing

2. Ferroelectric Tunnel Memristor

3. Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

4. Complementary resistive switches for passive nanocrossbar memories

5. Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices

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