Computationally efficient version of the Pao-Sah model with variable mobility
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
2. Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K
3. Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C
4. Correction factor in the split C–V method for mobility measurements
5. Simplified long-channel MOSFET theory
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent With Pao–Sah Model;IEEE Transactions on Electron Devices;2012-11
2. Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral;Active and Passive Electronic Components;2010
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