Correction factor in the split C–V method for mobility measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Investigation of the MOST channel conductance in weak inversion
2. Charge accumulation and mobility in thin dielectric MOS transistors
3. Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's
4. A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's
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