Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements-Reference-Cited by-同舟云学术

Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements

Published:1982-05 Issue:5 Volume:25 Page:417-422
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Panayotatos P.,Yang E.S.,Hwang W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Transition with grain size from electrode‐limited to bulk‐limited conduction in polycrystalline semiconductors

2. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

3. The effects of grain boundary and interface recombination on the performance of thin-film solar cells

4. Transport properties of polycrystalline silicon films

5. Interface recombination of charge carriers in bicrystals

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