Interface recombination of charge carriers in bicrystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference6 articles.
1. Recombination of Holes and Electrons at Lineage Boundaries in Germanium
2. Experimental Determination of Injected Carrier Recombination Rates at Dislocations in Semiconductors
3. Field Effect on an Illuminated Ge Surface and Investigation of the Surface Recombination Process
4. Recombination of Injected Carriers at Dislocation Edges in Semiconductors
5. H. J. Hovel,Semiconductors and Semimetals(Academic, New York, 1975), Vol. 11, pp. 25 and 26.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ELECTRICAL MEASUREMENTS OF THE GRAIN BOUNDARY LEVELS IN SEMICONDUCTORS;Le Journal de Physique Colloques;1982-10
2. Spectral response of photoconductivity in polycrystalline semiconductors;Solid-State Electronics;1982-06
3. Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements;Solid-State Electronics;1982-05
4. The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon films;Journal of Applied Physics;1981-11
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