Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

Published:2014-07-21 Issue:3 Volume:116 Page:033519
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Metaferia Wondwosen¹,Sun Yan-Ting¹,Pietralunga Silvia M.²,Zani Maurizio³,Tagliaferri Alberto³,Lourdudoss Sebastian¹

Affiliation:

1. Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden

2. CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano, Italy

3. Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano, Italy

Funder

VINNOVA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4890718

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4. Growth of Polycrystalline GaAs for Solar Cell Applications

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