Bulk electromigration and contact interface electromigration and conditions for eliminating both mechanisms in SiO2-covered aluminum lines
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. A model for the width dependence of electromigration lifetimes in aluminum thin‐film stripes
2. Linewidth dependence of electromigration in evaporated Al‐0.5%Cu
3. Electromigration mechanisms in aluminum lines
4. Grundlagen der Elektrodiffusion zur Zuverlässigkeitsverbesserung von Al-Leitbahnen für hochintegrierte Schaltungen;Schreiber,1985
5. Electromigration in thin aluminum films on titanium nitride
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The influence of Cu precipitation on electromigration failure in Al‐Cu‐Si;Journal of Applied Physics;1992-09
2. Electromigration in multilayer metallization: Drift‐controlled degradation and the electromigration threshold of Al‐Si‐Cu/TiNxOy/TiSi2contacts;Journal of Applied Physics;1991-11-15
3. Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanisms;Thin Solid Films;1989-08
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