Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanisms-Reference-Cited by-同舟云学术

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Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanisms

Published:1989-08 Issue: Volume:175 Page:29-36
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Schreiber H.-U.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Proc. IEEE Reliab. Phys. Symp.;Venables,1972

2. Proc. IEEE Reliab. Phys. Symp.;Wada,1983

3. Proc. IEEE Reliab. Phys. Symp.;Schafft,1985

4. Electromigration measuring techniques for grain boundary diffusion activation energy in aluminum

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1. A Critical Review on the Electromigration Effect, the Electroplastic Effect, and Perspectives on the Effects of Electric Current Upon Alloy Phase Stability;JOM;2019-07-26

2. Diffusional creep as a stress relaxation mechanism in electromigration;Journal of Applied Physics;1998-01

3. Electromigration in Thin Metal Films in the Presence of Two Stress-Relaxation Mechanisms;MRS Proceedings;1996

4. Time dependence of stress and hillock distributions during electromigration in thin metal film interconnections;Materials Science and Engineering: B;1994-02

5. Stress Distribution and Mass Transport Along Grain Boundaries During Steady-State Electromigration;MRS Proceedings;1994

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