Charge-pumping characteristics of virgin and stressed lightly-doped drain MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Modeling and Simulation of Charge-Pumping Characteristics for LDD-MOSFET Devices With LOCOS Isolation;IEEE Transactions on Electron Devices;2010-11
2. Radiation Effect Evaluation in Effective Short and Narrow Channels of LDD Transistor With LOCOS Isolation Using OTCP Method;IEEE Transactions on Device and Materials Reliability;2010-03
3. Using Oxide-Trap Charge-Pumping Method in Radiation-Reliability Analysis of Short Lightly Doped Drain Transistor;IEEE Transactions on Device and Materials Reliability;2010-03
4. An analytical model for charge pumping below strong inversion and accumulation;Solid-State Electronics;2002-12
5. Modelling of submicronic MOSFET's ageing effects using spice;Microelectronics Journal;2000-05
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