Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap‐filling experiment: The charge‐potential feedback effect-Reference-Cited by-同舟云学术

Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap‐filling experiment: The charge‐potential feedback effect

Published:1990-08 Issue:3 Volume:68 Page:1104-1113
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Goguenheim Didier,Vuillaume Dominique,Vincent Gilbert,Johnson Noble M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.346751

Reference22 articles.

1. Capture cross section of Si‐SiO2interface states generated during electron injection

2. Calculation of surface generation and recombination velocities at the Si‐SiO2interface

3. Electron states and recombination velocities at semiconductor surfaces and interfaces

4. Transient capacitance measurements of hole emission from interface states in MOS structures

5. Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors

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