Electron states and recombination velocities at semiconductor surfaces and interfaces-Reference-Cited by-同舟云学术

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Electron states and recombination velocities at semiconductor surfaces and interfaces

Published:1987 Issue:8 Volume:22 Page:789-795
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Lannoo M.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:01987002208078900/pdf

Reference32 articles.

1. Unified defect model and beyond

2. Measurements of the recombination velocity at germanium surfaces

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1. Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe;Journal of Applied Physics;2016-02-28

2. Ultrafast Carrier Dynamics in Individual Silicon Nanowires: Characterization of Diameter-Dependent Carrier Lifetime and Surface Recombination with Pump–Probe Microscopy;The Journal of Physical Chemistry C;2014-04-10

3. Nonradiative processes involving rare-earth impurities in nanostructures;Materials Science and Engineering: B;2001-04

4. Surface Recombination in Semiconductors;Materials Science Forum;1995-11

5. Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions;Journal of Applied Physics;1993-07

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