An analytical model for charge pumping below strong inversion and accumulation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. In-depth exploration of the Si–SiO2 interface traps using the charge pumping technique;Bauza;IEEE Trans. Electron Dev.,1997
2. A model for the charge-pumping current based on small rectangular voltage pulses;Wachnik;Solid-State Electron.,1986
3. The use of charge pumping to characterize generation by interface traps;Wachnik;IEEE Trans. Electron Dev.,1986
4. Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures;Bauza;Solid-State Electron.,1996
5. Charge pumping in MOS devices;Brugler;IEEE Trans. Electron Dev.,1969
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1. Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01
2. A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms;IEEE Transactions on Electron Devices;2009-01
3. On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors;Journal of Applied Physics;2005-01
4. Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET’s with oxides from 2.3 to 1.2 nm thick;Solid-State Electronics;2003-10
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