double-heterostructure bipolar transistors for high-speed ICs and OEICs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. InGaAs/InP composite collector heterostructure bipolar transistors
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3. Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
4. InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition
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4. An abrupt InP-GaInAs-InP DHBT;IEEE Electron Device Letters;2005-01
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