InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition

Published:1991-11-18 Issue:21 Volume:59 Page:2697-2699
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohkubo Michio,Iketani Akira,Ijichi Tetsurou,Kikuta Toshio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.105888

Reference5 articles.

1. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

2. InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

3. High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

4. GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy

5. Material properties ofp‐type GaAs at large dopings

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