Author:
Huo Wen-Juan ,Xie Hong-Yun ,Liang Song ,Zhang Wan-Rong ,Jiang Zhi-Yun ,Chen Xiang ,Lu Dong , ,
Abstract
An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (≥17.93 A/W) and high characteristic frequency (≥121.68 GHz) simultaneously.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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