Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture-Reference-Cited by-同舟云学术

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

Published:2015-03 Issue: Volume:18 Page:77-83
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Ji Yongsung,Lee Sang-A,Cha An-Na,Goh Munju,Bae Sukang,Lee Sanghyun,Son Dong Ick,Kim Tae-Wook

Funder

Korea Institute of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Polymer electronic memories: Materials, devices and mechanisms

2. Inkjet Printing-Process and Its Applications

3. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

4. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

5. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

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