Emerging of two-dimensional materials in novel memristor-Reference-Cited by-同舟云学术

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Emerging of two-dimensional materials in novel memristor

Published:2021-09-29 Issue:2 Volume:17 Page:
ISSN:2095-0462
Container-title:Frontiers of Physics
language:en
Short-container-title:Front. Phys.

Author:

Zhou Zhican,Yang Fengyou,Wang Shu,Wang Lei,Wang Xiaofeng,Wang Cong,Xie Yong,Liu Qian

Publisher

Springer Science and Business Media LLC

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1007/s11467-021-1114-5.pdf

Reference109 articles.

1. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, The missing memristor found, Nature 453 (7191), 80 (2008)

2. J. J. Yang, M. D. Pickett, X. Li, D. A. Ohlberg, D. R. Stewart, and R. S. Williams, Memristive switching mechanism for metal/oxide/metal nanodevices, Nat. Nanotechnol. 3(7), 429 (2008)

3. L. Chua, Memristor — The missing circuit element, IEEE Trans. Circuit Theory 18(5), 507 (1971)

4. Y. Yang and W. Lu, Nanoscale resistive switching devices: Mechanisms and modeling, Nanoscale 5(21), 10076 (2013)

5. D. Ielmini, Resistive switching memories based on metal oxides: Mechanisms, reliability and scaling, Semicond. Sci. Technol. 31(6), 063002 (2016)

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