Author:
Jansen Henri,de Boer Meint,Burger Johannes,Legtenberg Rob,Elwenspoek Miko
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. The Black Silicon Method: A Universal method for determining the parameter setting of a fluorine-based RIE in deep Si trench etching with profle control;Jansen,1994
2. R.Legtenberg, H.Jansen, M.de Boer, M.Elwenspoek,Anisotropic RIE of Si using SF6/O2/CHF3 gas mixtures,.submitted to J.Elec.Soc.
3. Microscopic uniformity is plasma etching;Gottscho;J. Vac. Sci. Tech. B.,1992
4. Charging of pattern features during plasma etching;Arnold;J. Appl. Phys.,1991
5. The influence of substrate topography on ion bombardment in plasma etching;Ingram;J. Appl. Phys.,1990
Cited by
111 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献