Inductively Coupled Plasma Dry Etching of Silicon Deep Trenches with Extremely Vertical Smooth Sidewalls Used in Micro-Optical Gyroscopes

Abstract

Micro-optical gyroscopes (MOGs) place a range of components of the fiber-optic gyroscope (FOG) onto a silicon substrate, enabling miniaturization, low cost, and batch processing. MOGs require high-precision waveguide trenches fabricated on silicon instead of the ultra-long interference ring of conventional F OGs. In our study, the Bosch process, pseudo-Bosch process, and cryogenic etching process were investigated to fabricate silicon deep trenches with vertical and smooth sidewalls. Different process parameters and mask layer materials were explored for their effect on etching. The effect of charges in the Al mask layer was found to cause undercut below the mask, which can be suppressed by selecting proper mask materials such as SiO2. Finally, ultra-long spiral trenches with a depth of 18.1 μm, a verticality of 89.23°, and an average roughness of trench sidewalls less than 3 nm were obtained using a cryogenic process at −100 °C.