Fully scaled 0.5 μm MOS cicuits by synchroton X-ray lithography: Resist systems and line width control-Reference-Cited by-同舟云学术

Fully scaled 0.5 μm MOS cicuits by synchroton X-ray lithography: Resist systems and line width control

Published:1989-05 Issue:1-4 Volume:9 Page:97-100
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Seeger D.,Kwietniak K.,Crockatt D.,Wilson A.,Warlaumont J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Silverman et. al., ‘Fully Scaled 0.5 μm MOS Circuits by Synchrotron Radiation X-ray Lithography: Device Fabrication and Overlay Evaluation,’ this volume.

2. Viswanathan, R. et. al., ‘Fully Scaled 0.5μm MOS Circuits by Synchrotron Radiation X-ray Lithography: Mask Fabrication and Characterization,’ this volume.

3. Proceedings from KTI Microelectronics Conference;Mack,1987

4. Sensitization of optical photoresists for electron-beam exposure of submicron patterns

5. Contrast and Sensitivity Enhancement of Resist in High Resolution Lithography;Chiong,1988

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lithography;Fundamentals of Semiconductor Processing Technology;1995

2. Resist materials and processes for X-ray lithography;IBM Journal of Research and Development;1993-05

3. X-ray lithography in IBM, 1980–1992, the development years;IBM Journal of Research and Development;1993-05

4. Control of fixturing-induced distortion in x-ray masks;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11

5. X-ray lithography: On the path to manufacturing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11