Plasma doping for the fabrication of ultra-shallow junctions-Reference-Cited by-同舟云学术

Plasma doping for the fabrication of ultra-shallow junctions

Published:2002-07 Issue:1-3 Volume:156 Page:229-236
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Felch S.B,Fang Z,Koo B.-W,Liebert R.B,Walther S.R,Hacker D

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. International Technology Roadmap for Semiconductors. Semiconductor Industry Association, San Jose, 1999.

2. Plasma doping for shallow junctions

3. Plasma doping system for 200 and 300 mm wafers, 2000 International Conference on Ion Implantation Technology Proceedings, IEEE;Liebert,2000

4. Comparison of ultra-shallow junctions with PLAD and beamline implantation, 2000 International Conference on Ion Implantation Technology Proceedings, IEEE;Felch,2000

5. Direct comparison of electrical performance of 0.1 μm pMOSFETs doped by plasma doping or low energy ion implantation, 2000 International Conference on Ion Implantation Technology Proceedings, IEEE;Lenoble,2000

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