Advances in ultrashallow doping of silicon
Author:
Affiliation:
1. University of Michigan – Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai China
Funder
the special-key project
Shanghai Municipality Bureau of Education
Publisher
Informa UK Limited
Subject
General Physics and Astronomy
Link
https://www.tandfonline.com/doi/pdf/10.1080/23746149.2020.1871407
Reference78 articles.
1. Generalized guide for MOSFET miniaturization
2. A folded-channel MOSFET for deep-sub-tenth micron era
3. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
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