Preferentially oriented and amorphous Ti, TiN and Ti/TiN diffusion barrier for Cu prepared by ion beam assisted deposition (IBAD)-Reference-Cited by-同舟云学术

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Preferentially oriented and amorphous Ti, TiN and Ti/TiN diffusion barrier for Cu prepared by ion beam assisted deposition (IBAD)

Published:2002-03 Issue: Volume:151-152 Page:434-439
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Chen Kewei,Yu Yuhui,Mu Haichuan,Luo E.Z.,Sundaravel B.,Wong S.P.,Wilson I.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Interactions of Cu with CoSi2, CrSi2and TiSi2with and without TiNxbarrier layers

2. Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers

3. Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures

4. Interactions of amorphous alloys with Si substrates and Al overlayers

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1. Correlation between optical, structural and microstructural properties of Ti–W–N thin films;Ceramics International;2020-04

2. Impact of (111)-oriented TiN conductive layers for the growth of vanadium dioxide films and the effect of grain boundary diffusions;Journal of Alloys and Compounds;2018-06

3. Diffusion barrier effect of Ta/Ti bilayer in organic dielectric/Cu interconnects;Thin Solid Films;2018-05

4. Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon Vias;IEEE Transactions on Electron Devices;2016-08

5. Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology;Silicon-On-Insulator (SOI) Technology;2014

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