Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon Vias-Reference-Cited by-同舟云学术

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Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon Vias

Published:2016-08 Issue:8 Volume:63 Page:3199-3204
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sandjaja Marco¹,Stolle Thomas¹,Bund Andreas²,Lang Klaus-Dieter³

Affiliation:

1. Department of High Density Interconnect and Wafer Level Packaging, Fraunhofer Institute of Relailibility and Microintegration, Berlin, Germany

2. Institute of Materials science and Engineering, Technische Universität Ilmenau, Ilmenau, Germany

3. Department of Nano Interconnect Technologies, Technische Universität Berlin, Berlin, Germany

Funder

Katholischer Akademischer Ausländer-Dienst (KAAD), Bonn, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7518696/07502156.pdf?arnumber=7502156

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