Strengthening the Electromigration Resistance of Nanoscaled Copper Lines by (3-aminopropyl)trimethoxysilane Self-Assembled Monolayer
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac1d5e/pdf
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1. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art
2. Highly adhesive electroless barrier/Cu-seed formation for high aspect ratio through-Si vias
3. Application of Self-Assembled Monolayers to the Electroless Metallization of High Aspect Ratio Vias for Microelectronics
4. Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon Vias
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