Impact of (111)-oriented TiN conductive layers for the growth of vanadium dioxide films and the effect of grain boundary diffusions-Reference-Cited by-同舟云学术

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Impact of (111)-oriented TiN conductive layers for the growth of vanadium dioxide films and the effect of grain boundary diffusions

Published:2018-06 Issue: Volume:748 Page:87-92
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Aoto Tomohiro,Sato Kenta,Mian Md. Suruz,Okimura Kunio

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Two series oxide resistors applicable to high speed and high density nonvolatile memory;Lee;Adv. Mater.,2007

2. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes;Leroy;Appl. Phys. Lett.,2012

3. Dependence of electrode on switching effect of Pr1-xCaxMnO3 thin film;Kim;Jpn. J. Appl. Phys.,2005

4. Oxides which show a metal-to-insulator transition at the neel temperature;Morin;Phys. Rev. Lett.,1959

5. Effects of various doping elements on the transition temperature of vanadium oxide semiconductors;Futaki;Jpn. J. Appl. Phys.,1969

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Triple Junctions and Grain Size on Oxygen Diffusion Into the Surface Layer of Material;Russian Physics Journal;2021-08

2. Grain-boundary diffusion modeling in a microstructural material;Computational Materials Science;2020-11

3. Self-oscillation Phenomena of Vanadium Dioxide Films Based on Their Insulator-Metal Transition;Vacuum and Surface Science;2019-06-10

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