Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Nanoscale holographic interferometry for strain measurements in electronic devices
2. Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
3. Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
4. Imaging modes for potential mapping in semiconductor devices by electron holography with improved lateral resolution
5. Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices
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1. Assessment of the strain depth sensitivity of Moiré sampling Scanning Transmission Electron Microscopy Geometrical Phase Analysis through a comparison with Dark-Field Electron Holography;Ultramicroscopy;2021-04
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3. An Approach to Extend Electron Holography into Characterization on Dopant Profiles for FinFET of Nanometer Semiconductor Device in Wafer-foundries;Microscopy and Microanalysis;2020-07-30
4. Off-axis electron holography combining summation of hologram series with double-exposure phase-shifting: Theory and application;Ultramicroscopy;2018-10
5. Optical Modulator P/N Junction Mapping by Electron Holography and Scanning Capacitance Microscopy;Microscopy and Microanalysis;2018-08
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