Assessing strain mapping by electron backscatter diffraction and confocal Raman microscopy using wedge-indented Si-Reference-Cited by-同舟云学术

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Assessing strain mapping by electron backscatter diffraction and confocal Raman microscopy using wedge-indented Si

Published:2016-04 Issue: Volume:163 Page:75-86
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Friedman Lawrence H.,Vaudin Mark D.,Stranick Stephan J.,Stan Gheorghe,Gerbig Yvonne B.,Osborn William,Cook Robert F.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

3. MEMS Vibration Energy Harvesting Devices With Passive Resonance Frequency Adaptation Capability

4. Effects of mechanical stress on polycrystalline-silicon resistors

5. Modeling of Thermal Stress in Microelectronic and Photonic Structures: Role, Attributes, Challenges, and Brief Review

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