Author:
Schulze A.,Cao R.,Eyben P.,Hantschel T.,Vandervorst W.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. D. Hisamoto, W.-C. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, et al., A folded-channel MOSFET for deep-sub-tenth micron era, in: Electron Devices Meeting, 1998. IEDM’98 Technical Digest., International, 1998: pp. 1032 –1034. DOI:10.1109/IEDM.1998.746531.
2. Tunnel field-effect transistor without gate-drain overlap;Verhulst;Appl. Phys. Lett.,2007
3. Experimental studies of Dose Retention and Activation in FinFET-based structures;Mody;J. Vac. Sci. Technol. B:,2010
4. 3d-Carrier Profiling in FinFETs using Scanning Spreading Resistance Microscopy;Mody;Electron Devices Meet. (IEDM),2011
5. A. Schulze, T. Hantschel, P. Eyben, A. Vandooren, R. Rooyackers, J. Mody, et al., Quantitative Two-Dimensional Carrier Mapping in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy, in: Proceedings MRS Spring Meeting 2010, San Francisco, USA, 2010. DOI:10.1557/PROC-1258-P06-02.
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献