Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography-Reference-Cited by-同舟云学术

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Published:2021-02-16 Issue:8 Volume:13 Page:9994-10000
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hývl Matěj¹^ORCID,Nogay Gizem²^ORCID,Loper Philipp²,Haug Franz-Josef²,Jeangros Quentin²^ORCID,Fejfar Antonín¹,Ballif Christophe²³,Ledinský Martin¹^ORCID

Affiliation:

1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00 Prague 6, Czech Republic

2. Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland

3. PV-Center, Centre Suisse d’Électronique et de Microtechnique (CSEM), Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland

Funder

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c21282

Reference49 articles.

1. The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cells

2. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates

3. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

4. SiO2 surface passivation layers – a key technology for silicon solar cells

5. Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

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