Electrical conductivity of plasma-deposited carbon–germanium amorphous semiconductors: correlation with nanostructure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. An amorphous dielectric-to-amorphous semiconductor transition in hydrogenated carbon-germanium films
2. Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family
3. Correlations between process parameters, chemical structure and electronic properties of amorphous hydrogenated GexC1−x films prepared by plasma-enhanced chemical vapour deposition in a three-electrode reactor
4. Transition from amorphous insulator to amorphous semiconductor in hydrogenated carbon–germanium films – investigations in submicrometer scale
5. Transition from Amorphous Semiconductor to Amorphous Insulator in Hydrogenated Carbon−Germanium Films Investigated by Raman Spectroscopy
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1. Effects of Bias on Optical and Chemical Bonding Properties of Germanium Carbon Films;Advanced Materials Research;2014-01
2. Effects of radio frequency power on the optical and electrical properties of germanium carbon films;Journal of Alloys and Compounds;2013-11
3. Effects of methane flow rate on the optical properties and chemical bonding of germanium carbon films deposited by reactive sputtering;Vacuum;2013-04
4. Comparative study of optical properties of germanium carbon films deposited by reactive sputtering and co-sputtering;Journal of Non-Crystalline Solids;2013-03
5. Effects of hydrogen and substrate temperature on the chemical bonding and optical properties of germanium carbon films deposited by reactive sputtering;Applied Surface Science;2012-06
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