Effects of tensile strain and substrate off-orientation on the growth of multiple quantum well structures by CBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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1. InAsyP1−y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4;Journal of Crystal Growth;2002-01
2. Morphology of homo-epitaxial vicinal (100) III–V surfaces;Journal of Crystal Growth;1999-04
3. A modified BCF model to quantitatively describe the (100)InP growth rate in chemical beam epitaxy;Journal of Crystal Growth;1998-06
4. X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells;Journal of Applied Physics;1998-04
5. Cation Sublattice Ordering in GaxIn1—xAs Quantum Wells: Evidence from Electron–Phonon Interaction;physica status solidi (a);1997-11
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