A modified BCF model to quantitatively describe the (100)InP growth rate in chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Computer simulation of crystal growth
2. The growth of crystals of low supersaturation
3. The growth of crystals and the equilibrium structure of their surfaces
4. Nonlinear model for temporal evolution of stepped surfaces during molecular-beam epitaxy
5. Atomic scale studies of epitaxial growth processes using X-ray techniques
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3. Growth of high quality InP layers in STI trenches on miscut Si (001) substrates;Journal of Crystal Growth;2011-01
4. Surface diffusion effects on growth of nanowires by chemical beam epitaxy;Journal of Applied Physics;2007-02
5. Dual Elementary-Steps Growth Mechanism of CdHg(SCN)4(H6C2OS)2Crystals;Japanese Journal of Applied Physics;2004-04-09
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