InAsyP1−y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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1. InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell;Journal of Applied Physics;2012-10
2. Impact of arsenic species (As[sub 2]∕As[sub 4]) on the relaxation and morphology of step-graded InAs[sub x]P[sub 1−x] on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
3. Research on III-V compound semiconductor based optoelectronic devices;Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701)
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