Metalorganic molecular beam epitaxy of strain‐compensated InAsP/InGaAsP multi‐quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361016
Reference20 articles.
1. Strained quaternary quantum well lasers for high temperature operation
2. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
3. 1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operation
4. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
5. Theoretical analysis of differential gain of 1.55 μm InGaAsP/InP compressive‐strained multiple‐quantum‐well lasers
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1. GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures;Journal of Crystal Growth;2005-08
2. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05
3. InAsyP1−y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4;Journal of Crystal Growth;2002-01
4. Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE;Journal of Crystal Growth;2001-07
5. Arsenic incorporation in InAsP/InP quantum wells;Journal of Electronic Materials;1999-10
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