Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
2. Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C
3. Role of vanadium in organometallic vapor phase epitaxy grown GaAs
4. Carbon diffusion in undoped,n‐type, andp‐type GaAs
5. Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio
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