In-situ etching of GaAs/AlxGa1−xAs by CBr4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Selective area etching of InP with CBr4 in MOVPE
2. High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation
3. Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD
4. Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy
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1. Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE;Journal of Electronic Materials;2023-06-27
2. Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm;Laser & Photonics Reviews;2022-10-26
3. Concept and numerical simulations of a widely tunable GaAs‐based sampled‐grating diode laser emitting at 976 nm;IET Optoelectronics;2017-02-23
4. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa;Journal of Crystal Growth;2016-01
5. Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities;Optical Materials Express;2013-09-18
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