Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy

Published:1994-07 Issue:4 Volume:12 Page:1186-1190
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Abernathy C. R.,Pearton S. J.,Ren F.,Hobson W. S.,Wisk P. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579293

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium;Journal of Applied Physics;2017-01-21

2. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa;Journal of Crystal Growth;2016-01

3. Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions;Journal of Crystal Growth;2013-07

4. Growth and characterization of heavily selenium doped GaAs using MOVPE;Journal of Crystal Growth;2011-01

5. In-situ etching of GaAs/AlxGa1−xAs by CBr4;Journal of Crystal Growth;2008-11

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