GaN thermal decomposition in N2AP-MOCVD environment-Reference-Cited by-同舟云学术

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GaN thermal decomposition in N2AP-MOCVD environment

Published:2008-11-07 Issue:12 Volume:23 Page:125025
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bchetnia A,Kemis I,Touré A,Fathallah W,Boufaden T,Jani B El

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. In situ optical monitoring of the decomposition of GaN thin films

2. Analysis of GaN decomposition in an atmospheric MOVPE vertical reactor

3. GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

4. In situ measurements of GaN nucleation layer decompostion

5. In situ decomposition study of GaN thin films

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3. Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model;Crystal Growth & Design;2023-11-28

4. High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions;Vacuum;2023-09

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