Surface photoabsorption monitoring of III–V and GaN MOVPE surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
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4. Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
5. Relationship among reflectance‐difference spectroscopy, surface photoabsorption, and spectroellipsometry
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1. Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs;IEICE Transactions on Electronics;2016
2. In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption;Japanese Journal of Applied Physics;2013-06-01
3. Plasma chemistry and diagnostic in an Ar–N2–H2microwave expanding plasma used for nitriding treatments;Journal of Physics D: Applied Physics;2010-05-06
4. In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries;Journal of Applied Physics;2006-02-15
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