In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption-Reference-Cited by-同舟云学术

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In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption

Published:2013-06-01 Issue:6S Volume:52 Page:06GG05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayase Kazuya,Nishitani Tomohiro,Suzuki Katsunari,Imai Hironobu,Hasegawa Jun-ichi,Namba Daiki,Meguro Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes

2. Surface charge limit in NEA superlattice photocathodes of polarized electron source

3. Superlattice Photocathode for High Brightness and Long NEA-surface lifetime

4. The GaAs spin polarized electron source

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on work function and corresponding electron emission during NEA activation of GaAs surfaces;Applied Surface Science;2020-05

2. Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD–NEA Multichamber System;Journal of Electronic Materials;2019-01-08

3. Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy;Journal of Vacuum Science & Technology B;2018-11

4. STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O₂;IEICE Transactions on Electronics;2016

5. Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs;IEICE Transactions on Electronics;2016

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