In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172703
Reference38 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Effects of the narrow band gap on the properties of InN
3. Effects of film polarities on InN growth by molecular-beam epitaxy
4. Effects of film polarities on InN growth by molecular-beam epitaxy
5. Effects of film polarities on InN growth by molecular-beam epitaxy
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1. Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(001) surface by PA-MBE and their in situ XPS analysis;Applied Surface Science;2015-03
2. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy;Applied Physics Letters;2014-08-11
3. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013
4. Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy;physica status solidi (a);2010-03-29
5. Investigation on buffer layer for InN growth by molecular beam epitaxy;Journal of the Ceramic Society of Japan;2010
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