Vapor-phase epitaxy of InxGa1−xN using chloride sources
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth of InN at High Temperature by Halide Vapor Phase Epitaxy
2. Vapor Phase Epitaxy of $\bf In_{\ninmbi x}Ga_{1-{\ninmbi x}}N$ Using $\bf InCl_{3}$, $\bf GaCl_{3}$ and $\bf NH_{3}$ Sources
3. New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using $\bf (CH_{3})_{3}Ga$, HCl and $\bf NH_{3}$
4. Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100) GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy
5. The VPE growth of InGaP by the single flat temperature zone method
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1. Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy;Japanese Journal of Applied Physics;2019-05-17
2. Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy;Journal of Crystal Growth;2016-12
3. Investigation of NH3input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy;Japanese Journal of Applied Physics;2015-11-30
4. Growth of thick InGaN layers by tri-halide vapor phase epitaxy;Japanese Journal of Applied Physics;2014-01-01
5. Thermodynamic analysis on HVPE growth of InGaN ternary alloy;Journal of Crystal Growth;2011-03
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