The VPE growth of InGaP by the single flat temperature zone method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy
2. GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
3. Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy
4. Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C)
5. Metalorganic vapor phase epitaxial growth of In1−xGaxP
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vapor-phase epitaxy of InxGa1−xN using chloride sources;Journal of Crystal Growth;1998-06
2. Vapor Phase Epitaxy of $\bf In_{\ninmbi x}Ga_{1-{\ninmbi x}}N$ Using $\bf InCl_{3}$, $\bf GaCl_{3}$ and $\bf NH_{3}$ Sources;Japanese Journal of Applied Physics;1997-05-30
3. Vapor-solid distribution in In1−xGaxAs and In1−xGaxP alloys grown by atomic layer epitaxy;Journal of Crystal Growth;1995-10
4. Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method;Journal of Crystal Growth;1992-09
5. Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE;Journal of Crystal Growth;1989-11
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