Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy-Reference-Cited by-同舟云学术

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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Published:2016-12 Issue: Volume:456 Page:145-150
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hirasaki Takahide,Eriksson Martin,Thieu Quang Tu,Karlsson Fredrik,Murakami Hisashi,Kumagai Yoshinao,Monemar Bo,Holtz Per Olof,Koukitu Akinori

Funder

JSPS

MEXT

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference37 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Performance of High Power Light Emitting Diodes in Display Illumination Applications

3. Optical Properties of Strained AlGaN and GaInN on GaN

4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO₄ Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (b);2024-04-03

2. Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission;Semiconductor Physics, Quantum Electronics and Optoelectronics;2023-06-26

3. ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs;Gallium Nitride Materials and Devices XVIII;2023-03-15

4. The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO₄ through Trihalide Vapor‐Phase Epitaxy;physica status solidi (b);2023-02-19

5. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

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