The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO4 through Trihalide Vapor‐Phase Epitaxy

Abstract

Herein, the effect of intermediate layers for high‐speed InGaN growth using trihalide vapor‐phase epitaxy (THVPE) on ScAlMgO4 (SAM) is investigated. The coverage and thickness of the intermediate layer have a significant impact on both composition and crystalline quality. Herein, InGaN is successfully fabricated with 17% of indium on SAM in a lattice‐matched state employing THVPE, showing the X‐ray rocking curve full width at half maximum values less than 1000 arcsec, in a two‐step growth. THVPE is used to indicate the possibility of fabricating high‐quality InGaN quasi‐substrate with high indium composition.