Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab112c/pdf
Reference34 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy
3. Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
4. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
5. Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
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1. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01
2. Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy;Japanese Journal of Applied Physics;2021-09-09
3. A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*;Chinese Physics B;2021-01-01
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