Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells-Reference-Cited by-同舟云学术

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Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

Published:2015-09-01 Issue:10 Volume:30 Page:105015
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hestroffer Karine,Wu Feng,Li Haoran,Lund Cory,Keller Stacia,Speck James S,Mishra Umesh K

Funder

National Science Foundation

Office of Naval Research

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=10/a=105015/pdf

Reference34 articles.

1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

2. Design and characterization of GaN∕InGaN solar cells

3. Defects in epitaxial multilayers

4. Critical thickness calculations for InGaN/GaN

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