Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
2. Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-lnGaAsP quantum-well lasers
3. 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
4. Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy
5. CBE growth of 2%-strained InAsP MQWs for 1.5μm wavelength laser diodes
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1. Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells;Materials;2023-09-04
2. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
3. Thermally Induced Metastability of InGAas Single-Layer for Highly Strained Superlattices by Metal Organic Chemical Vapor Deposition;SSRN Electronic Journal;2021
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5. Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica;ACS Applied Materials & Interfaces;2016-07-06
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